Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 1995-03-15

著者

• Matsuura Hiroto

  College Of Engineering University Of Osaka Prefecture

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• MATSUURA Hideharu

  Department of Electronics, Osaka Electro-Communication University

• YOSHIMOTO Masahiro

  Department of Electrical Engineering, Kyoto University

• Yoshimoto Masahiro

  Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University

• Yoshimoto Masahiro

  Department Of Electronic Science And Engineering Kyoto University

• Yoshimoto Masahiro

  Department Of Electrical Engineering Kyoto University

• Yoshimoto M

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Yoshimoto M

  Kyoto Inst. Technol. Kyoto Jpn

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Matsuura Hideharu

  Department Of Electronic Engineering And Computer Science Osaka Electro-communication University

• Yoshimoto Masahiro

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

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