Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-04-15

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• CHEN Yi

  Department of Chemistry, Nanjing University

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Kimoto T

  Kyoto Univ. Kyoto Jpn

• Tamura Satoshi

  Department of pediatrics, National cardiovascular center

• FUJIHIRA Keiko

  Department of Electronic Science and Engineering, Kyoto University

• Chen Y

  Department Of Electronic Science And Engineering Kyoto University

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Tamura Shin-ichiro

  Research Center For Quantum Effect Electronics Tokyo Institute Of Technology

• Fujihira K

  Department Of Electronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Fujihira Keiko

  Department Of Electronic Science And Engineering Kyoto University

• Tamura Satoshi

  Department Of Pediatrics National Cardiovascular Center

• Chen Yi

  Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University

関連論文

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• Electrical activation of high-concentration aluminum implanted in 4H-SiC
• Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
• 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
• Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(Heterostructure Microelectronics with TWHM2003)
• Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
• Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
• Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
• Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces
• Anisotropy in breakdown field of 4H-SiC
• High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
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• Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
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• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
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• Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
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