Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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Matsunami H
Kyoto Univ. Kyoto Jpn
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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KOMATSU Yuji
Department of Electrical Engineering, Kyoto University
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HOSOTANI Keiji
Department of Electrical Engineering, Kyoto University
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Komatsu Y
Functional Devices Research Laboratories Nec Corporation
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Hosotani Keiji
Department Of Electrical Engineering Kyoto University
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Komatsu Yuji
Department Of Chemistry And Biotechnology Graduate School Of Engineering Tottori University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University
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- Anisotropy in breakdown field of 4H-SiC
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