Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-03-15
著者
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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Kawano Hiroaki
Department of Cardiovascular Medicine, Kumamoto University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Kawano Hiroaki
Dept. Of Electronic Sci. & Eng. Kyoto University
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KANZAKI Yosuke
Department of Electronic Science and Engineering, Kyoto University
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NOBORIO Masato
Department of Electronic Science and Engineering, Kyoto University
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