KIMOTO Tsunenobu | Department of Electronic Science and Engineering, Kyoto University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
Deep Interface States in SiO_2/p-type α-SiC Structure
Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
Robust 4H-SiC pn Diodes Fabricated using (1120) Face
High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
Recent Progress in Epitaxial Growth of SiC for Power Devices
Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃

もっと見る

スポンサーリンク