Kimoto Tsunenobu | Department Of Electronic Science And Engineering Kyoto University
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概要
関連著者
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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SUDA Jun
Department of Electronic Science and Engineering, Kyoto University
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Kobayashi Sota
Department Of Electronic Science And Engineering Kyoto University
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Kikuchi Ryosuke
Department Of Cardiology Nagoya University Graduate School Of Medicine
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Suda Jun
Department Of Electronic Science And Engineering Kyoto University
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NAKAMURA Syun-ichi
Department of Electronic Science and Engineering, Kyoto University
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MIURA Mineo
Department of Electronic Science and Engineering, Kyoto University
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Shimoyama Kenji
Mitsubishi Chemical Co.
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Miura Mineo
Department Of Electronic Science And Engineering Kyoto University
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HASHIMOTO Kouichi
Department of Electronic Science and Engineering, Kyoto University
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Matsunami Hiroyuki
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Syun-ichi
Department Of Electronic Science And Engineering Kyoto University
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Hashimoto Kouichi
Department Of Cellular Neurophysiology Graduate School Of Medical Science Kanazawa University
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Hashimoto Kouichi
Department Of Electronic Science And Engineering Kyoto University
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Namita Hideo
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Shimoyama Kenji
Mitsubishi Chemical Corporation
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Nagao Satoru
Mitsubishi Chemical Group Science And Technology Research Center Inc.
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Yamaji Kazuki
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Hayashi Yuichirou
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Yamaji Kazuki
Department Of Electronic Science And Engineering Kyoto University
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Hayashi Yuichirou
Department Of Electronic Science And Engineering Kyoto University
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Bessho Takeshi
Higashifuji Technical Center Toyota Motor Corporation
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OKUMURA Hironori
Department of Electronic Science and Engineering, Kyoto University
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KANEKO Mitsuaki
Department of Electronic Science and Engineering, Kyoto University
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DANNO Katsunori
Higashifuji Technical Center, Toyota Motor Corporation
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SAITOH Hiroaki
Higashifuji Technical Center, Toyota Motor Corporation
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SEKI Akinori
Higashifuji Technical Center, Toyota Motor Corporation
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SHIRAI Takayuki
Higashifuji Technical Center, Toyota Motor Corporation
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SUZUKI Hiroshi
Higashifuji Technical Center, Toyota Motor Corporation
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KAWAI Yoichiro
Higashifuji Technical Center, Toyota Motor Corporation
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Saitoh Hiroaki
Higashifuji Technical Center Toyota Motor Corporation
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Kawai Yoichiro
Higashifuji Technical Center Toyota Motor Corporation
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Danno Katsunori
Higashifuji Technical Center Toyota Motor Corporation
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Shirai Takayuki
Higashifuji Technical Center Toyota Motor Corporation
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Okumura Hironori
Department Of Electronic Science And Engineering Kyoto University
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Seki Akinori
Higashifuji Technical Center Toyota Motor Corporation
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Kaneko Mitsuaki
Department Of Electronic Science And Engineering Kyoto University
著作論文
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(0001) Substrate by Molecular-Beam Epitaxy (Special Issue : Solid State Devices and Materials (1))
- Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
- Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
- AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy