SUDA Jun | Department of Electronic Science and Engineering, Kyoto University

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概要

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著作論文

A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
ZrB_2 Substrate for Nitride Semiconductors
Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
(2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
Temperature Dependence of the Raman Shift of the A_ mode for NdGaO_3 Crystal
The First-Order Raman Spectra and Lattice Dynamics for YAlO_3 Crystal
The First-Order Raman Spectra and Lattice Dynamics for YAlO_3 Crystal
Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
High-Quaity AIN by Initia ayer-by-ayer Growth on Surface-Controed 4H-SIC(0001)Substrate
Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
Temperature Dependence of the Linewidth of the First-Order Raman Spectra for CaWO_4 Crystal
Temperature Dependence of the Ag+Bg-Mode of Raman Shift for CaWO_4 Crystal
4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃

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