Matsunami Hiroyuki | Department Of Eectrical Engineering Kyoto University
スポンサーリンク
概要
関連著者
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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Kimoto T
Kyoto Univ. Kyoto Jpn
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Tanaka Tetsuro
Department Of Electrical And Electronics Engineering Kagoshima University
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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NAKAMURA Shun-ichi
Department of Biochemistry, Kobe University School of Medicine
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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SUZUKI AKIRA
Department of Hospital Pharmacy
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SUDA Jun
Department of Electronic Science and Engineering, Kyoto University
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YANO Hiroshi
Department of Surgery, NTT West Osaka Hospital
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Yano H
Kyoto Univ. Kyoto‐shi Jpn
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Yano Hiroshi
Department Of Surgery Ntt West Osaka Hospital
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Kimoto Tsunenobu
Science And Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Yano H
Science And Engineering Kyoto University:(present Address) Graduate School Of Materials Science Nara
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Onojima Norio
Department Of Elecronic Science And Engineering Kyoto University
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Itoh Akira
Department Of Cardiology Osaka City General Hospital
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Yamashita Atsushi
Department of Pathology, Faculty of Medicine, University of Miyazaki
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Matsuura Hiroto
College Of Engineering University Of Osaka Prefecture
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Suda Jun
Department Of Electronics Science And Engineering Kyoto University
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Yoshinobu Tatsuo
Department Of Electrical Engineering Kyoto University:(present Address) The Institute Of Scientific
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Nishino Katsushi
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Yamashita A
Tokai Univ. Hiratsuka Jpn
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Tamura Satoshi
Department of pediatrics, National cardiovascular center
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YOO Woo
Department of Electrical Engineering, Kyoto University
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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FUJIHIRA Keiko
Department of Electronic Science and Engineering, Kyoto University
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Tanaka Tetsuro
Department Of Electronics Faculty Of Engineering Kyoto University
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Yoo Woo
Wafer Masters Inc.
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Yoo Woo
Department Of Electrical Engineering Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Technical College Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electronics Faculty Of Engineering Kyoto University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Tamura Shin-ichiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Chen Zhi
Department Of Elecronic Science And Engineering Kyoto University
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Nishino S
Kyoto Inst. Technol. Kyoto Jpn
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Fujihira K
Department Of Electronic Science And Engineering Kyoto University
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Hirao Takashi
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Otani S
National Inst. Res. In Inorganic Materials Ibaraki Jpn
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Hirao Takashi
Department Of Electrical Engineering Osaka University
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OKADA Tatsuya
Department of Mechanical Engineering, Faculty of Engineering, The University of Tokushima
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Hiramatsu Takahiro
Res. Inst. For Nanodevices Kochi Univ. Of Technol. 185 Miyanokuchi Tosayamada-cho Kami Kochi 782-850
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Hirao T
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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AMANO Hiroshi
Faculty of Horticulture, Chiba University
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Otani S
National Inst. Materials Sci. Jpn
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Otani Shigeki
National Institute For Materials Science Advanced Materials Laboratory
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FUYUKI Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology
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Hirao T
Research Institute For Nano-devices Kochi University Of Technology
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HIRAO Taichi
Department of Electronic Science and Engineering, Kyoto University
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Suda J
Sasebo National Coll. Of Technol. Nagasaki
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Suda J
Kyoto Univ. Kyoto Jpn
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Suda Jun
Department Of Electronic Science And Engineering Kyoto University
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Okada T
Department Of Mechanical Engineering Faculty Of Engineering The University Of Tokushima
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Okada Tatsuya
Department Of Mathematics School Of Medicine Fukushima Medical University
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Yoo W
Wafermasters Inc. Ca Usa
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Yoshinobu T
Osaka Univ. Osaka Jpn
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NISHINO Katsushi
Department of Electrical and Electronic Engineering, University of Tokushima
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KAMIYAMA Satoshi
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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AKASAKI Isamu
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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Nakamura Kazuhiro
Department of Neurosurgery, Mito Medical Center
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Nishino K
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Nishino K
Department Of Electronic Science And Engineering Kyoto University
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Katoh H
Toyohashi Univ. Technol. Toyohashi Jpn
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Kamiyama S
Faculty Of Science And Technology Meijo University
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki I
Faculty Of Science And Technology Meijo University
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Akasaki I
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Okada Tatsuya
Department Of Mechanical Engineering Tokushima University
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Otani S
National Inst. Materials Sci. Ibaraki Jpn
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Otani Shigeki
National Institute For Materials Science
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CHEN Zhi
Department of Elecronic Science and Engineering, Kyoto University
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ONOJIMA Norio
Department of Elecronic Science and Engineering, Kyoto University
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Kinoshita H
Univ. Hyogo Hyogo Jpn
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KINOSHITA Hiroyuki
Kyocera Corporation Youkaichi Plant
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SAITOH Takashi
Department of Anesthesiology, University of the Ryukyus
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Malhan Rajesh
Research Laboratories Denso Corp.
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Takeuchi Yuichi
Research Laboratories Denso Corp.
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Yamashita Atsushi
Department Of Electrical Engineering Faculty Of Engineering Kyoto University:(present Address) Nec C
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KOMATSU Yuji
Department of Electrical Engineering, Kyoto University
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HATAYAMA Tomoaki
Department of Electronic Science and Engineering, Kyoto University
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OKA Tohru
Department of Electrical Engineering, Kyoto University
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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Itoh A
Ricoh Co. Ltd. Miyagi Jpn
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Oka T
Nagaoka Coll. Technol. Niigata Jpn
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Komatsu Y
Functional Devices Research Laboratories Nec Corporation
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Nakamura S
Department Of Electronic Science And Engineering Kyoto University
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Iwami Motohiro
Department Of Electrical Engineering Kyoto University:(present Address) Department Of Electrical Eng
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Ikeda Mitsushi
Department Of Electronics Faculty Of Engineering Kyoto University
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Itoh Mitsunari
Department Of Electronics And Information Science Kyoto Institute Of Technology
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CHEN Yi
Department of Chemistry, Nanjing University
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Fujii Hisao
Department of Endoscopy and Ultrasound, Nara Medical University
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VACCARO Pablo
Department of Photonics, ATR Wave Engineering Laboratories
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Kobayashi Sota
Department Of Electronic Science And Engineering Kyoto University
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INOKO Fukuji
The University of Tokushima
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Aizawa Kouichi
Department Of Integrated Biosciences Graduate School Of Frontier Sciences The University Of Tokyo:sa
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Aizawa Kouichi
Department Of Electrical Engineering Kyoto University
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Tanaka Naoki
Department of Gastroenterology, Shinshu University School of Medicine
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Du Kai-ying
Department Of Electrical Engineering Kyoto University
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Mulati David
Department Of Electronic Science And Engineering Kyoto University
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Asano Katsuaki
Department Of Cardiology Higashi Takarazuka Satoh Hospital
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MURAKAMI Takashi
Department of Clinical Sciences and Laboratory Medicine, Kansai Medical University
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NODA Hiroshi
Department of Legal Medicine, Kinki University School of Medicine
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Inoko F
The University Of Tokushima
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Inoko Fukuji
Department Of Mechanical Engineering Tokushima University
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Tanaka N
Department Of Applied Biological Sciences Faculty Of Agriculture Saga University
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Vaccaro Pablo
Department Of Electrical Engineering Kyoto University
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Shiomi Hiromu
Sixon Ltd.
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Terakawa Akira
Department Of Electronic Science And Engineering Kyoto University:(present Address)new Materials Res
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MITSUI Hideaki
Department of Electrical Engineering, Kyoto University
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TARUI Yoichiro
Department of Electrical Engineering, Kyoto University
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Kuroda Naotaka
Department Of Electrical Engineering Kyoto University
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WATANABE YASUHIRO
Department of Neurology, Matsue Red Cross Hospital
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INOUE NAOYA
Department of Surgery, Wakayama Red-cross Hospital
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OKAMOTO Kouichi
Department of Neurology, Gunma University School of Medicine
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Inoko Fukuji
Detartment Of Mechanical Engineering Tokushima University
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EBISUI Takahiro
Department of Mechanical Engineering, Tokushima University
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Ebisui Takahiro
Department Of Mechanical Engineering Tokushima University
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NEGORO Yuki
Department of Electronic Science and Engineering, Kyoto University
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KUJIME Noriyuki
Department of Mechanical Engineering, Tokushima University
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Yap Yoke
Department Of Electrical Engineering Osaka University
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Nishino Hironori
Department of Electrical Engineering, Faculty of Engineering, Kyoto University
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Ueda Tetsuzo
Department of Electrical Engineering, Faculty of Engineering, Kyoto University
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Kusaka M
Research Laboratory For Surface Science Faculty Of Science Okayama University
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Asano Katsuaki
Department Of Electrical Engineering Kyoto University:(present Address) Atsugi Factory Sony Corporat
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NAKAMURA Syun-ichi
Department of Electronic Science and Engineering, Kyoto University
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MIURA Mineo
Department of Electronic Science and Engineering, Kyoto University
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Hirai Masaaki
Research Laboratory For Surface Science Faculty Of Science Okayama University
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YOKOTA Yasuhiro
The Research Center for Microanalysis, Okayama University of Science
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KAJITA Daisuke
Department of Electronic Science and Engineering, Kyoto University
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Murakami Takashi
Department Of Cardiology Okayama University School Of Medicine
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Nishino Shigehiro
Department Of Electronics Kyoto University
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Inoko Fukuji
Department Of Mechanical Engineering Faculty Of Engineering Tokushima University
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Kawano Hiroaki
Department Cardiovascular Medicine Kumamoto University:division Of Intensive Care Unit Kumamoto Univ
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Chen Y
Department Of Electronic Science And Engineering Kyoto University
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Kimoto Tsunenobu
Department Of Electronics Science And Engineering Kyoto University
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YAGUCHI Seiji
Kobe Shipyard and Machinery Works, Mitsubishi Heavy Industries, Ltd.
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OHYAMA Naoki
Takasago Research and Development Center, Mitsubishi Heavy Industries, Ltd.
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HATAYAMA Tomoaki
Ion Engineering Research Institute Corporation
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YONEDA Tomoaki
Ion Engineering Research Institute Corporation
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NAKATA Toshitake
Ion Engineering Research Institute Corporation
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WATANABE Masanori
Ion Engineering Research Institute Corporation
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HOSOTANI Keiji
Department of Electrical Engineering, Kyoto University
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FUJII Tadashi
Department of Electronic Science and Engineering, Faculty of Engineering, Kyoto University
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyolo University
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SHIRAFUJI Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology
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IWAMI Motohiro
Research Laboratory for Surface Science, Faculty of Science, Okayama University
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KUSAKA Masahiko
Research Laboratory for Surface Science, Faculty of Science, Okayama University
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Kawai M
Surface Chemistry Laboratory
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Noda Hiroshi
Department Of Animal Health Faculty Of Veterinary Medicine Rakuno Gakuen University
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Miura Mineo
Department Of Electronic Science And Engineering Kyoto University
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Inoue N
Kyoto Univ. Kyoto Jpn
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Fujii Hisao
Department Of Electronics Kyoto University
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Ueda Tetsuzo
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Ohyama Naoki
Takasago Research And Development Center Mitsubishi Heavy Industries Ltd.
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Yaguchi Seiji
Kobe Shipyard And Machinery Works Mitsubishi Heavy Industries Ltd.
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Ishida Makoto
Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University
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Takai Hitoshi
Department Of Electronics Kyoto University
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Onojima N
Department Of Electronic Science And Engineering Kyoto University
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Pensl Gerhard
Institute Of Applied Physics University Of Erlangen-nurnberg
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Yokota Y
The Research Center For Microanalysis Okayama University Of Science
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Hosotani Keiji
Department Of Electrical Engineering Kyoto University
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Kajita D
Department Of Electronic Science And Engineering Kyoto University
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Kajita Daisuke
Department Of Electronic Science And Engineering Kyoto University
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Kyuragi Hakaru
Department Of Electronics Faculty Of Engineering Kyoto University
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Iwami Motohiro
Reseach Laboratory For Surface Science Faculty Of Science Okayama University
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Iwami M
Department Of Physics Faculty Of Science Hiroshima University
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Kanzaki Yosuke
Department Of Electronic Science And Engineering Kyoto University
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Ashida Hisashi
Department Of Electronics Faculty Of Engineering Kyoto University
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Kurobe Ken-ichi
Department Of Electronic Science And Engineering Kyoto University
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Kuriyama Yoichi
Department Of Electronics Faculty Of Engineering Kyoto University
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HASHIMOTO Tadao
Department of Applied Chemistry, Muroran Institute of Technology
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Hashimoto Tadao
Department Of Electrical Engineering Kyoto University
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Hashimoto Tadao
Department Of Applied Chemistry Muroran Institute Of Technology
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HASHIMOTO Tetsutaro
Department of Electronic Science and Engineering, Kyoto University
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DANNO Katsunori
Department of Electronic Science and Engineering, Kyoto University
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NEGORO Yuuki
Department of Electronic Science and Engineering, Kyoto University
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HASHIMOTO Kouichi
Department of Electronic Science and Engineering, Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University:(present Address) Department Of El
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KUROBE Tatsuro
Department of Electronic Science and Engineering, Kyoto University
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OHTSUKI Tetsuya
Department of Electrical Engineering, Kyoto University
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TAKUBO Kenji
Department of Electrical Engineering, Kyoto University
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KOMODA Michio
Department of Electrical Engineering, Kyoto University
著作論文
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
- Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
- Recent Progress in Epitaxial Growth of SiC for Power Devices
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
- Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
- Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
- Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
- A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
- Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- SiO_2 Film Deposition by KrF Excimer Laser Irradiation
- Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
- Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
- Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Photo-Ionization of Aluminum Atoms by Vacuum Ultra Violet Light
- Composition Dependence of Inhomogeneous Hydrogen Bonding Structures in a-SiGe:H
- Lattice-Matched LPE Growth of In_Ga_xP_As_y Layers on (100) GaAs Substrates
- Galvanomagnetic Effects in Single Crystals of Cadmium Arsenide
- Preparation of a High Mobility Thin Film of Cd_3As_2
- Solid-State Phase Transformation in Cubic Silicon Carbide
- Thermal Oxidation of SiC and Electrical Properties of Al-SiO_2-SiC MOS Structure
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells
- Electrical Properties of Undoped p-CdSb at Low Temperatures
- Negative Magnetoresistance in Ag Doped p-CdSb
- New Blue Photoluminescence of Ga-Doped 4H-SiC Grown from Si Melt
- Photoluminescence of 4H-SiC Single Crystals Grown from Si Melt
- Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method
- Defect Luminescence in SiC Light-Emitting Diodes
- Fundamental Properties of MIS Solar Cells : I-2: SILICON SOLAR CELLS (II)
- MIS Silicon Solar Cells with In_2O_3 Antireflective Coating
- Plasma-Grown Oxide on InP
- GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique
- Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
- High-Voltage 4H-SiC pn Diodes Fabricated by p-Type Ion Implantation
- Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
- Analysis of Electron Beam Induced Current Considering Sample Dimensions : Measurement of Diffusion Length and Surface Recombination Velocity
- Preparation of PLZT Thin Films by RF Sputtering
- Plasma Anodic Oxidation of InP
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
- Electronic Properties of the Interface between Si and TiO_2 Deposited at Very Low Temperatures
- Structural and Optical Properties of Polycrystalline Silicon Thin Films Deposited by the Plasma Enhanced Chemical Vapour Deposition Method
- Semiconductor Silicon Carbide for Power Electronic Application
- Cracks Observed on the Chalcogenide Glass Surfaces after Switching
- Cd_3As_2 Thin Film Magnetoresistor
- Photoelectric Effects of In_2O_ Si Diodes
- Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
- High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H–SiC(0001) Substrate
- Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- High-Sensitivity Analysis of $\mathrm{Z}_{1}$ Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition