Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method
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概要
- 論文の詳細を見る
Peak shifts of electroluminescence spectra from red to blue are observed in heavily doped 6H SiC LED's with a linear and a quadratic impurity profiles prepared by the overcompensation method. The mechanism is studied based on the electrical properties, injection mechanisms, and luminescent properties. Most of the characteristics are explained by the photon assisted tunneling model.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Tanaka Tetsuro
Department Of Electrical And Electronics Engineering Kagoshima University
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Ikeda Mitsushi
Department Of Electronics Faculty Of Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Tanaka Tetsuro
Department Of Biopharmaceutics School Of Pharmacy Fukuyama University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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