Lattice-Matched LPE Growth of In_<1-x>Ga_xP_<1-y>As_y Layers on (100) GaAs Substrates

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概要

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• Lattice-matched In_<1-x>Ga_xP_<1-y>As_y epitaxial layers with a small atomic fraction of As have been grown on (100) GaAs substrates by the supercooling LPE method using a horizontal slider boat system. In the case of lattice-matching at growth temperature of 785℃, flat and uniform mirror-like layers of 2 to 10 μm in thickness are obtained under the following conditions : initial supercooling, 15℃ ; cooling rate, 0.2℃/min ; growth time, 10 to 30 min. Characterization by X-ray diffraction, photoluminescence, and Hall-effect measurements shows the good crystal quality of the layers.

• 社団法人応用物理学会の論文
• 1980-04-05

著者

• SUZUKI AKIRA

  Department of Hospital Pharmacy

• Kyuragi Hakaru

  Department Of Electronics Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electronics Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• MATSUMURA Shigeo

  Department of Electronics, Faculty of Engineering, Kyoto University

• Suzuki Akira

  Department Of Biology Faculty Of Education Chiba University

• Matsumura Shigeo

  Department Of Electronics Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Suzuki Akira

  Department Of Electronics Faculty Of Engineering Kyoto University

• Suzuki Akira

  Department Of Anesthesiology And Intensive Care Hamamatsu University School Of Medicine

• SUZUKI Akira

  Department of Electronics, Faculty of Engineering, Kyoto University

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