Thermal Oxidation of SiC and Electrical Properties of Al-SiO_2-SiC MOS Structure
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概要
- 論文の詳細を見る
Silicon dioxide layers have been thermally grown on the (0001) C face of 6H-SiC at 850-1100℃ in wet O_2 and studied by Auger analysis and ellipsometry. These oxide layers are quite homogeneous with a narrow interface width of 〓80 Å. The oxide thickness vs, the oxidation time follows the general relationship used for the thermal oxidation of Si. Temperature dependencies of the oxidation rate constants were obtained. C-V characteristics of Al-SiO_2-SiC MOS structures were measured at 10 Hz-1 MHz. The accumulation, depletion and inversion regions are clearly observed under illumination. In the dark, the inversion does not occur, probably owing to the absence of minority carriers because of the large band gap. Frequency dispersion is not observed. The minimum surface-state density is 〜2×10^<12>cm^<-2>eV^<-1>. The oxide resistivity and the breakdown strength are 2×10^<12>Ωcm and 2×10^6V/cm, respectively.
- 社団法人応用物理学会の論文
- 1982-04-20
著者
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SUZUKI AKIRA
Department of Hospital Pharmacy
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Ashida Hisashi
Department Of Electronics Faculty Of Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Mameno Kazunobu
Department Of Electronics Faculty Of Engineering Kyoto University
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FURUI Nobuyuki
Department of Electronics, Faculty of Engineering, Kyoto University
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Furui Nobuyuki
Department Of Electronics Faculty Of Engineering Kyoto University
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Suzuki Akira
Department Of Biology Faculty Of Education Chiba University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Suzuki Akira
Department Of Anesthesiology And Intensive Care Hamamatsu University School Of Medicine
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