Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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Matsunami H
Kyoto Univ. Kyoto Jpn
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Nakamura Kazuhiro
Department of Neurosurgery, Mito Medical Center
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Fuyuki Takashi
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Kazuhiro
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Kazuhiro
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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