Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy

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概要

• 論文の詳細を見る

• Control of GaP growth at the atomic-layer level has been achieved by laser-triggering in chemical beam epitaxy (CBE) under a simultaneous supply of triethylgallium (TEGa) and thermally cracked PH_3. The growth rate of GaP was enhanced at low substrate temperatures by ultraviolet (UV) light emitted from a N_2 laser. The growth rate is controlled by either the TEGa supply between laser pulses or the photon number, and it shows saturation with a high TEGa supply. This preliminary result will open a new atomic-layer epitaxial mode by means of UV-laser irradiation without an alternating supply of source gases in CBE.

• 社団法人応用物理学会の論文
• 1993-03-01

著者

• VACCARO Pablo

  Department of Photonics, ATR Wave Engineering Laboratories

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Vaccaro Pablo

  Department Of Electrical Engineering Kyoto University

• YOSHIMOTO Masahiro

  Department of Electrical Engineering, Kyoto University

• Yoshimoto Masahiro

  Department Of Electrical Engineering Kyoto University

• HASHIMOTO Tadao

  Department of Applied Chemistry, Muroran Institute of Technology

• Hashimoto Tadao

  Department Of Electrical Engineering Kyoto University

• Hashimoto Tadao

  Department Of Applied Chemistry Muroran Institute Of Technology

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• KAJIMOTO Atsushi

  Department of Electrical Engineering, Kyoto University

• Kajimoto Atsushi

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

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