Electrical and optical properties of high-density lateral junction light-emitting diodes array
スポンサーリンク
概要
- 論文の詳細を見る
GaAs/Al_xGa_<1-x>As epi-layers were grown on the GaAs (311)A patterned substrate with amphoteric silicon as a dopant. High-density, 2400 dots per inch, LED arrays were fabricated using lateral junction with device pitch of 10.6 micron. Electrical and optical properties of the LEDs were measured at room temperature. The light emission spectrum shows a single peak at a wavelength of 813 nm with FWHM of 56 nm. The light output power of a single LED was 1 μW for the injection current of 2 mA.
- 社団法人電子情報通信学会の論文
- 2004-08-20
著者
-
Saito Nobuo
Department Of Photonics Atr Wave Engineering Laboratories
-
DHARMARASU Nethaji
Department of Photonics, ATR Wave Engineering Laboratories
-
VACCARO Pablo
Department of Photonics, ATR Wave Engineering Laboratories
-
SARAVANAN Shanmugam
Department of Photonics, ATR Wave Engineering Laboratories
-
OCAMPO J.
Department of Photonics, ATR Wave Engineering Laboratories
-
KUBOTA Kazuyoshi
Department of Photonics, ATR Wave Engineering Laboratories
-
VACCARO Pable
Department of Photonics, ATR Wave Engineering Laboratories
-
Ocampo J.
Department Of Photonics Atr Wave Engineering Laboratories
-
Saravanan S
Department Of Photonics Atr Wave Engineering Laboratories
-
Vaccaro P
Department Of Photonics Atr Wave Engineering Laboratories
-
Vaccaro Pablo
Department Of Electrical Engineering Kyoto University
-
Kubota Kazuyoshi
Department Of Photonics Atr Wave Engineering Laboratories
-
Kubota Kazuyoshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University:central Research Labora
-
Kubota Kazuyoshi
Atr Adaptive Communications Research Labs.
-
Dharmarasu Nethaji
Department Of Photonics Atr Wave Engineering Laboratories
-
Saravanan Shanmugam
Atr Adaptive Communications Research Labs.
-
Saravanan Shanmugam
Department Of Nonlinear Science Atr Wave Engineering Laboratories
-
Voccaro Pablo
Atr Adaptive Communications Research Laboratories
-
SAITO Nobuo
Department of Chemistry, Graduate School of Science, The University of Tokyo
-
Saito Nobuo
Department of Chemistry, Faculty of Science, The University of Tokyo
関連論文
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Photodoping of Ag into Single Crystal As_2S_3
- Characterization of Hydrogenated Amorphous silicon: Some Behaviors of Hydrogen and Impurities Studied by Film Characterization Techniques : II-1: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (I)
- Overall Water Splitting by RuO_2-loaded Hexagonal YInO_3 with a Distorted Trigonal Bipyramid
- Overall Water Splitting by RuO_2-dispersed Divalent-ion-doped GaN Photocatalysts with d^ Electronic Configuration
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Remarkable Support Effects of Gallium Compounds on the Activity and Selectivity of Ru Metal Catalyst for Liquid-phase Citral Hydrogenation
- RuO_2-loaded Sr^-doped CeO_2 with d^0 Electronic Configuration as a New Photocatalyst for Overall Water Splitting
- Photocatalytic Activity of RuO_2-loaded Pb_xWO_4 (x = 0.2-1.1) for Water Decomposition
- A New Photocatalyst of RuO_2-loaded PbWO_4 for Overall Splitting of Water
- Photocatalytic Activity for Water Decomposition of RuO_2-Loaded SrIn_2O_4 with d^ Configuration
- Self-Assembly of Microstage Using Micro-Origami Technique on GaAs
- Array of Micromachined Components Fabricated Using "Micro-Origami" Method
- Long-Wavelength Multilayered InAs Quantum Dot Lasers
- Bissilyl Ketone ; A Convenient Method for the Synthesis and Its Pd(0)Catalyzed Reaction with Alkenes and Alkynes
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Tuneling of the Dislocations in Bcc ^3He Crystals
- Electrical Charging Characteristics of Spherulitic Polypropylene
- Long-Wavelength Multilayered InAs Quantum Dot Lasers
- Asymmetric Reactions of Enamines with Methyl(E)-4-Oxo-4-(2-oxo-1,3-oxazolidin-3-yl)-2-butenoate by the Use of a Chiral Titanium Reagent.
- InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm2/Layer)
- High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates