Array of Micromachined Components Fabricated Using "Micro-Origami" Method
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-30
著者
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Vaccaro Pablo
Atr Adaptive Communications Research Laboratories
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Vaccaro Pablo
Atr Optical And Radio Communications Research Laboratories
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Kubota Kazuyoshi
Atr Adaptive Communications Research Labs.
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Kubota Kazuyoshi
Atr Adaptive Communications Research Laboratories
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Saravanan Shanmugam
Atr Adaptive Communications Research Labs.
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Saravanan Shanmugam
Atr Adaptive Communications Research Laboratories
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Voccaro Pablo
Atr Adaptive Communications Research Laboratories
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AIDA Tahito
ATR Adaptive Communications Research Labs.
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Aida Tahito
Electric Gases Department Iwatani International Corp.
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Aida Tahito
Atr Adaptive Communications Research Laboratories
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Vorob’ev Alexander
ATR Adaptive Communications Research Laboratories, 2-2-2 Hikaridai, Keihanna Science City, Kyoto 619
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Vorob'ev Alexander
Atr Adaptive Communications Research Laboratories
関連論文
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- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Electrical and optical properties of high-density lateral junction light-emitting diodes array
- Self-Assembly of Microstage Using Micro-Origami Technique on GaAs
- Array of Micromachined Components Fabricated Using "Micro-Origami" Method
- Photoluminescence from High r-Electron Subbands and Intersubband Electroluminescence Using X-ΓCarrier Injection in a Simple GaAs/AlAs Superlattice
- Observation of the Infrared Emission from Simply Periodical GaAs/AlAs Superlattices
- Simultaneous Observation of Coherent GaSb-like and AlSb-like Longitudinal Optical Phonons in GaSb/AlSb Superlattices
- Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
- Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown
- Formation Process of High-Field Domain in Superlattices Observed by Photoluminescence Spectra Branch
- Simultaneous Observation of Coherent GaSb-like and AlSb-like Longitudinal Optical Phonons in GaSb/AlSb Superlattices
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- Formation Process of High-Field Domain in Superlattices Observed by Photoluminescence Spectra Branch