Formation Process of High-Field Domain in Superlattices Observed by Photoluminescence Spectra Branch
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概要
- 論文の詳細を見る
We report photoluminescence Stark-shift behaviors under various optical excitation intensity for a GaAs/AlAs superlattice. The study clarifies the formation process of the high-field domain by analyzing photoluminescence (PL) spectra. We observed changes in splitting feature of the PL spectra, by varying excitation carrier density near resonance voltages between the $\Gamma$ states. This clarifies how the inner electric field in superlattices varies by increasing carrier density.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Hosoda Makoto
Department Of Applied Physics Graduate School And Faculty Of Engineering Osaka City University
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DOMOTO Chiaki
ATR Adaptive Communications Research Laboratories
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OHTANI Naoki
ATR Adaptive Communications Research Laboratories
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Aida Tahito
Atr Adaptive Communications Research Laboratories
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Hosoda Makoto
Department of Applied Physics, Osaka City University, Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan
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Domoto Chiaki
ATR Adaptive Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Aida Tahito
ATR Adaptive Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Ohtani Naoki
ATR Adaptive Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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