Influence of Γ-X Resonance on Photocurrent-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
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概要
- 論文の詳細を見る
We have investigated the influence of Γ-X resonance on the photocurrent-voltage characteristics in GaAs/InAlAs type-I strained superlattices. To explain the experimental results, we have calculated the energies of the Γ and X electron states, which are confined in the GaAs and InAlAs layers, respectively, using an effective-mass approximation taking into account the strain effect. We conclude that the Γ1-X1_<xy> resonance causes peaky profiles in the photocurrent-voltage characteristics.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Tominaga Koji
Atr Optical And Radio Communications Research Laboratories
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Tominaga Koji
Atr Optical And Radio Communications Research Laboratories:(present Address) Sanyo Electric Co. Ltd.
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Tominaga Koji
Department Of Industrial Chemistry Faculty Of Engineering Chubu University
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Tominaga Koji
Semiconductor Research Center Sanyo Electric Co. Ltd.
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NAKAYAMA Masaaki
Department of Physics, School of Science, Kwansei Gakuin University
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Nakama Masaaki
Faculty Of Science Kwansei-gakuin University:department Of Applied Physics Faculty Of Engineering Os
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Nakayama Masaaki
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Tominaga K
Kobe Univ. Kobe Jpn
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Egami Norifumi
Materials Science & Advanced Devices Nhk Science & Technical Research Laboratories
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Egami N
Atr Adaptive Communications Res. Lab.
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Nakayama M
Tohoku Univ. Sendai
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OHTANI Naoki
ATR Adaptive Communications Research Laboratories
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KUROYANAGI Kazuyoshi
ATR Adaptive Communications Research Laboratories
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EGAMI Norifumi
ATR Adaptive Communications Research Laboratories
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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