Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
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概要
- 論文の詳細を見る
We have investigated the influence of type-I to type-II transition by an applied electric field on photoluminescence and carrier transport by time-of-flight experiments in GaAs/AlAs short-period superlattices. Type-I to type-II transition was confirmed by observing degenerated photoluminescence spectra caused by Γ-X mixing. The rise time of the time-resolved photocurrent was found to increase by the type-I to type-II transition. This result clearly shows that the tunneling time through type-II alignment is longer than that through type-I alignment. The delayed carrier transport is most likely caused by Γ-X-Γ transfer. The results suggest that in type-II superlattices, carriers prefer Γ-X-Γ transfer to Γ-Γ sequential tunneling.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Tominaga Koji
Atr Optical And Radio Communications Research Laboratories
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Mimura Hidenori
ATR Optical Radio Communications Research Laboratories
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OHTANI Naoki
ATR Optical and Radio Communications Research Laboratories
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Fujiwara Kenzo
Department Of Electric Engineering Kyushu Institute Of Technology
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories,
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Tominaga Koji
ATR Optical and Radio Communications Research Laboratories,
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Ohtani Naoki
ATR Optical and Radio Communications Research Laboratories,
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Mimura Hidenori
ATR Optical and Radio Communications Research Laboratories,
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