Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Hirai M
Osaka Univ. Osaka Jpn
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Fujita K
Department Of Electrical Engineering Kyushu Institute Of Technology
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Fujita K
Gifu National Coll. Technol. Gifu Jpn
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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HIRAI Manabu
ATR Optical and Radio Communications Research Laboratories
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OHNISHI Hajime
ATR Optical and Radio Communications Research Laboratories
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Hirai M
Department Of Earth And Space Science Graduate School Of Science Osaka University
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Fujita K
Atr Adaptive Communications Research Laboratories
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