Miniature Two-Axis Actuator for High-Data-Transfer-Rate Optical Data Storage System

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-03-30

著者

• Shima Hiroki

  Av-it Development Group. Sony Corporation

• Nakao Takashi

  Av-it Development Group. Sony Corporation

• MARUYAMA Tatsuya

  Corporate Research Center, Fuji Xerox Company, Ltd.

• Watanabe Toshihide

  Atr Adaptive Communications Research Laboratories:(present Address)nhk Science And Technical Researc

• Watanabe T

  Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E

• Yamamoto K

  Kaneka Corporation

• YAMAMOTO Kenji

  AV-IT Development Group. Sony Corporation

• OSATO Kiyoshi

  AV-IT Development Group. Sony Corporation

• HASHIMOTO Gakuji

  AV-IT Development Group. Sony Corporation

• MARUYAMA Tsutomu

  AV-IT Development Group. Sony Corporation

• WATANABE Toshio

  AV-IT Development Group. Sony Corporation

• Watanabe T

  Laboratory Of Advanced Science And Technology For Industry University Of Hyogo

• Osato K

  Av-it Development Group. Sony Corporation

• Nakao T

  Av-it Development Group. Sony Corporation

• Watanabe Takeo

  Univ. Hyogo Hyogo Jpn

• Maruyama T

  Av-it Development Group. Sony Corporation

• Watanabe Takayuki

  Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

関連論文

• Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
• The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
• Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
• Photofabrication of Kinoforms as Multilevel Relief Structures on Azobenzene-Containing Polymer Films
• D-4 Manufacturing Technology of High Resolution Probes for NDT
• Enhancement of Ultrasonic Testing Equipment Time Based Resolution by Synthetic Waveform Generator : Ultrasonic Microscopy and Nondestructive Testing
• Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
• High-resolution RBS analysis of Si-dielectrics interfaces
• Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition
• Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
• Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
• Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
• Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
• Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
• Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
• Structural and Electrical Properties of Polycrystalline Bi_Nd_xTi_3O_ Ferroelectric Thin Films with in-Plane c-Axis Orientations
• Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
• Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
• Electrical Properties of (Ca,Sr)Bi_4Ti_40_ Thin Films Fabricated Using a Chemical Solution Deposition Method
• Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
• Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
• Design of Dye Concentrations in Azobenzene-Containing Polymer films for Volume Holographic Storage
• Polarization Encoding for Digital Holographic Storage
• Analysis of Interactions between Green Fluorescent Protein and Silicon Substrates Using Molecular Dynamics Simulations
• Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
• Novel Interatomic Potential Energy Function for Si, O Mixed Systems
• Room-Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Silicon Doping in Nonplanar Epitaxy
• Thermal Stability of Beryllium Atoms in Be δ-Doped GaAs Grown on GaAs(111)A by Molecular Beam Epitaxy
• Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
• Electronic and Structural Requirements for Metabolic Activation of Butylated Hydroxytoluene Analogs to Their Quinone Methides, Intermediates Responsible for Lung Toxicity in Mice
• METABOLIC ACTIVATION AND GLUTATHIONE CONJUGATION OF BUTYLATED HYDROXYTOLUENE
• IDENTIFICATION OF NEW METABOLITES OF BUTYLATED HYDROXYTOLUENE (BHT) IN RATS
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
• Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
• Cation Distribution and Structural Instability in Bi_La_xTi_3O_
• Raman Spectroscopic Fingerprint of Ferroelectric SrBi_2Ta_2O_9 Thin Films: A Rapid Distinction Method for Fluorite and Pyrochlore Phases : Electrical Properties of Condensed Matter
• Spectral Characteristics of Thin-Film Stacked-Tandem Solar Modules
• Optimization of Device Design for Thin-Film Stacked Tandem Solar Modules in Terms of Outdoor Performance
• Challenge of Near-Field Recording beyond 50.4 Gbit/in^2
• Optical Recording Using High Numerical-Aperture Microlens by Plasma Etching
• Miniature Two-Axis Actuator for High-Data-Transfer-Rate Optical Data Storage System
• Cross-talk Canceller for Wobbling Signal
• Near-Field Optical Recording on a Pre-Grooved Phase-Change Disk in the Blue-Violet
• Optical Recording Using High Numerical-Aperture Microlens by Plasma Etching
• 25 GB Read-Only Disk System using the Two-Dimensional Equalizer
• Near-Field Phase-Change Optical Recording of 1.36 Numerical Aperture
• Optical Disk Recording Using a GaN Blue-Violet Laser Diode
• Signal Processing for 15/27 GB Read-Only Disk System
• New Equalizer to Improve Signal-to-Noise Ratio
• TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
• Characterization of Ferroelectric Property of C-Axis- and Non-C-Axis-Oriented Epitaxially Grown Bi_2VO_ Thin Films : Electrical Properties of Condonsed Matter
• Analysis of Interactions between Luciferase and Si Substrates Using Molecular Dynamics Simulations
• Optical Confinement Effect for below 5 μm Thin Film Poly-Si Solar Cell on Glass Substrate
• Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Cathode electron injection breakdown model and time dependent dielectric breakdown lifetime prediction in high-k/metal gate stack p-type metal-oxide-silicon field effect transistors
• Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1nm (Special issue: Solid state devices and materials)
• Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state
• Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
• Spectral Effects of a Single-Junction Amorphous Silicon Solar Cell on Outdoor Performance
• Sulfurization in Gas Mixture of H_2S and O_2 for Growth of CuInS_2 Thin Films
• Improvement of the Electrical Properties of Cu-Poor CuInS_2 Thin Films by Sodium Incorporation
• Thin-Film Polycrystalline Si Solar Cell on Glass Substrate Fabricated by a Novel Low Temperature Process
• Vibrational Overtone Absorption of Side Chain in Silicone at 1.55 μm Wavelength Band
• Digital Thermooptic Switch Formed Using Silicone Resin Waveguides
• Outgassing Analysis in EUV Resist
• Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
• Characteristics of CA Resist in EUV Lithography
• Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
• Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
• Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
• Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
• Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
• Asymmetric Ultrasonic Pulse Radiation Using Electromagnetic-Induction Transducer and PZT(Pb(Zr-Ti)O_3) Transducer with Wave Synthesis Method
• Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
• Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
• Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
• Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
• Separation between Surface Adsorption and Reaction of NH_3 on Si (100) by Flash Heating
• Atomic-Layer Surface Reaction of SiH_4 on Ge(100) ( Quantum Dot Structures)
• Quantum Effect on Helium Adsorbed in Y Zeolite : I. QUANTUM LIQUIDS AND SOLIDS : He in Restricted Geometry
• 0.8-Numerical-Aperture Two-Element Objective Lens for the Optical Disk
• Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
• Adsorption and Dissociation Mechanism of Excited N_2 on ZnSe Surface
• Mitigation of Low Outgassing and Small Line Edge Roughness for EUVL Resist
• Resist Outgassing by EUV Irradiation
• Fabrication of Aspherical Mirrors for Extreme Ultra-Violet Lithography (EUVL) Using Deposition Techniques
• A Novel Design of Three-Aspherical-Mirror Imaging Optics for Extreme Ultra-Violet Lithography
• Properties of Silicon-Oxygen Alloy Films Prepared from SiH_4+CO_2 Gas Mixture
• A New Type of Heterojunction a-Si Photodiode for Lensless Contact-Type Image Sensor
• Wide Optical-Gap a-Si:O:H Films Prepared from SiH_4-CO_2 Gas Mixture

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