Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-11-10

著者

• CHIKYOW Toyohiro

  National Institute for Mateirals Science

• Umezawa Naoto

  National Inst. For Materials Sci. Ibaraki Jpn

• YASUTAKE Kiyoshi

  Department of Precision Engineering, Faculty of Engineering, Osaka University

• KAMIYAMA Satoshi

  Semiconductor Leading Edge Technologies, Inc.

• WATANABE Heiji

  Department of Precision Science and Technology, Osaka University

• SHIRAISHI Kenji

  Institute of Physics, University of Tsukuba

• YAMADA Keisaku

  Nanotechnology Research Laboratories, Waseda University

• Kamiyama Satoshi

  Semiconductor Leading Edge Technologies Inc.

• ARIKADO Tsunetoshi

  Semiconductor Leading Edge Technologies Inc.

• YOSHIDA Shiniti

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• WATANABE Yasumasa

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• Yasutake Kiyoshi

  Osaka Univ. Osaka Jpn

• Yamamoto K

  Kaneka Corporation

• Arikado Tsunetoshi

  Semiconductor Leading Edge Technologies Inc. (selete)

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