Epitaxial Growth of the Wurtzite (112^^-0) AlN Thin Films on Si(100) with MnS Buffer Layer : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-15
著者
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KOINUMA Hideomi
Materials and Structures Laboratory, Tokyo Institute of Technology
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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Yoo Young-zo
National Institute For Materials Science Nanomaterials Assembly Group
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Ahmet Parhat
National Institute For Materials Science
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Koinuma H
National Institute For Materials Science (nims)
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KOINUMA Hideomi
Tokyo Institute of Technology
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KOINUMA Hideomi
National Institute for Materials Science
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Koinuma Hideomi
Department Of Applied Physics Graduate School Of Engineering Nagoya University
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Koinuma Hideomi
Crest Japan Science And Technology Corporation
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Koinuma Hideomi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Koinuma Hideomi
Department Of Industrial Chemistry University Of Tokyo
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Song J‐h
Electronics And Telecommunications Res. Inst. Daejon Kor
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Koinuma Hideomi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Song Jeong-hwan
Materials And Structures Laboratory Tokyo Institute Of Technology
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Ahmet Parhat
National Institute For Material Science
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Yoo Young-zo
National Institute For Materials Science
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Koinuma Hideomi
National Institute for Materials Science (NIMS)
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