High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

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概要

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• This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of $4\times 10^{16}$ cm-3, while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines. Meanwhile, ZnO:[N+Te] layers show dominant A0X emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of photoluminescence properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121--157 meV.

• Japan Society of Applied Physicsの論文
• 2010-03-25

著者

• YAO Takafumi

  Center for Interdisciplinary Research, Tohoku University

• CHIKYOW Toyohiro

  National Institute for Mateirals Science

• Yao Takafumi

  Center For Interdisciplinary Research Tohoku University

• YONENAGA Ichiro

  Institute for Materials Research, Tohoku University

• Yonenaga Ichiro

  Institute For Materials Research Tohoku University

• Lee Hyunjae

  Center For Interdisciplinary Research Tohoku University

• Park Seunghwan

  Center For Interdisciplinary Research Tohoku University

• Jung Mina

  Department Of Nano-semiconductor Engineering National Korea Maritime University

• Minegishi Tsutomu

  Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Oh Dongcheol

  Center for Optoelectronic Materials and Devices, Department of Defense Science and Technology, Hoseo

• Taishi Toshinori

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Park Jinsub

  Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Chang Jiho

  Department of nano-semiconductor Engineering, National Korea Maritime University, Busan 606-791, Kor

• Im Inho

  Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Ha Junseok

  Faculty of Applied Chemical Engineering, Chonnam National University, Kwangju 500-757, Korea

• Hong Soonku

  Department of Nano Information Systems Engineering, Chungnam National University, Daejeon 305-764, K

• Taishi Toshinori

  Institute For Materials Research Tohoku University

• Chang Jiho

  Department Of Nano-semiconductor Engineering National Korea Maritime University

• Minegishi Tsutomu

  Center For Interdisciplinary Research Tohoku University

• Chikyow Toyohiro

  National Inst. Materials Sci. Ibaraki Jpn

• Im Inho

  Center For Interdisciplinary Research Tohoku University

• Ha Junseok

  Faculty Of Applied Chemical Engineering Chonnam National University

• Hong Soonku

  Department Of Nano Information Systems Engineering Chungnam National University

• Park Jinsub

  Center For Interdisciplinary Research Tohoku University

• Oh Dongcheol

  Center For Optoelectronic Materials And Devices Department Of Defense Science And Technology Hoseo U

• Minegishi Tsutomu

  Department Of Chemical System Engineering The University Of Tokyo

• Yonenaga Ichiro

  Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Taishi Toshinori

  Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Chang Jiho

  Department of Applied Science, National Korea Maritime University, Busan 606-791, Republic of Korea

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