Photoelectrochemical Properties of Nonpolar and Semipolar GaN

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概要

• 論文の詳細を見る

• The photoelectrochemical and electrical properties of nonpolar $(11\bar{2}0)$-oriented and semipolar $(11\bar{2}2)$-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of $(11\bar{2}0)<(0001)<(11\bar{2}2)$. The highest photocurrent at a zero bias had been expected for the $(11\bar{2}0)$ sample considering the flatband potential, but the photocurrent of the $(11\bar{2}0$) sample was the lowest among the three. This could have been due to the electric properties of the $(11\bar{2}0)$ sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-10-15

著者

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Baker Troy

  Materials Department University Of California Santa Barbara

• Masui Hisashi

  Materials Department College Of Engineering University Of California

• Yao Takafumi

  Center For Interdisciplinary Research Tohoku University

• IZA Michael

  Materials and Electrical Engineering Departments, University of California

• Kaeding John

  Materials And Electrical Engineering Departments University Of California

• Fujii Katsushi

  Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An

• Ohkawa Kazuhiro

  Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An

• Nakamura Shuji

  Materials Department University Of Cahfornia

• Sato Hitoshi

  Materials Department And Electrical Engineering Department University Of California

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Baker Troy

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Iwaki Yasuhiro

  Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Ohkawa Kazuhiro

  Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science Group, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan

• Kaeding John

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fujii Katsushi

  Nakamura Inhomogeneous Crystal Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Tokyo University of Science Group, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan

• Sato Hitoshi

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Sato Hitoshi

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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