Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
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概要
- 論文の詳細を見る
AlGaN/GaN heterostructures were regrown on three semi-insulating GaN templates with threading dislocation densities of ${\sim}2\times 10^{10}$, ${\sim}5\times 10^{8}$, and ${\sim}5\times 10^{7}$ cm-2. Regrowths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the effects of threading dislocation density on leakage through Schottky contacts on the AlGaN/GaN heterostructures. A similar AlGaN/GaN heterostructure was directly grown on 4H-SiC under Ga-rich conditions for comparison with the regrown heterostructures. High electron mobility transistors were fabricated. Decreasing the threading dislocation density from ${\sim}2\times 10^{10}$ to ${\sim}5\times 10^{7}$ cm-2 yielded up to a 45-fold decrease in the average reverse Schottky diode current at $-10$ V bias.
- 2011-02-25
著者
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Mishra Umesh
Electrical And Computer Engineering Department University Of California
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Wong Man
Electrical And Computer Engineering Department University Of California
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Wong Man
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Kaun Stephen
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Dasgupta Sansaptak
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Choi Soojeong
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Chung Roy
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Chung Roy
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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