Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

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概要

• 論文の詳細を見る

• In this paper, we report for the first time an estimation of hot electron relaxation time in GaN using electrical measurements. Hot electron transistors (HETs) with GaN as the base layer and different base-emitter barrier-height configurations and base thicknesses were fabricated. Common-base measurements were performed to extract the differential transfer ratio, and an exponential decay of the transfer ratio with increasing base thickness was observed. A hot electron mean free path was extracted from the corresponding exponential fitting and a relaxation time was computed, which, for low energy injection, matched well with theoretically predicted relaxation times based on longitudinal optical (LO) phonon scattering.

• 2013-03-25

著者

• Mishra Umesh

  Ece Department Ucsb

• Raman Ajay

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Dasgupta Sansaptak

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Lu Jing

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Hurni Christophe

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Gupta Geetak

  ECE Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• DASGUPTA Sansaptak

  ECE Department, University of California

• RAMAN Ajay

  ECE Department, University of California

• GUPTA Geetak

  ECE Department, University of California

• LU Jing

  ECE Department, University of California

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