Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
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概要
- 論文の詳細を見る
The metalorganic chemical vapor deposition of AlN and GaN on C-face 6H–SiC was investigated. Similar to the procedure on Si-face SiC, GaN films were fabricated in a two-step process, where first a thin AlN base layer was deposited prior to the growth of the main GaN layer. Polarity conversion from the expected N-polar AlN and GaN to Al-polar AlN and Ga-polar GaN films was observed when the AlN base layers were deposited using a low ammonia to trimethylaluminum ratio of 250 during growth. The properties of the resulting Ga-face GaN-films were similar to those grown on Si-face SiC. Hexagonal surface features were seen on the N-polar AlN and GaN films obtained with a high V/III-ratio during AlN growth.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-03-25
著者
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Lee Grace
Materials Department University Of California
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Fichtenbaum Nicholas
Electrical And Computer Engineering Department University Of California
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Wu Feng
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Fichtenbaum Nicholas
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Lee Grace
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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