Optimization of Device Structures for Bright Blue Semipolar ($10\bar{1}\bar{1}$) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The device structures of semipolar ($10\bar{1}\bar{1}$) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75 mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.
- 2010-07-25
著者
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Nakamura Shuji
Electrical And Computer Engineering Department University Of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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Ohta Hiroaki
Materials Department University Of California
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Pan Chih-chien
Materials Department University Of California
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Koslow Ingrid
Materials Department University Of California
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Ha Jun-Seok
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Sonada Junichi
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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