Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (20\bar{2}1), (20\bar{2}\bar{1}), (10\bar{1}0), and (0001) planes. Each plane exhibited a characteristic ``critical'' emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm<sup>2</sup>) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (20\bar{2}1), (20\bar{2}\bar{1}), and (10\bar{1}0) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.
- 2013-05-25
著者
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FARRELL Robert
Materials Department, and ERATO JST, UCSB Group, University of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Huang Shih-Chieh
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Kawaguchi Yoshinobu
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Nakamura Shuji
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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