Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-15

著者

• Keller Stacia

  Department Of Electrical And Computer Engineering University Of California

• DENBAARS Steven

  Electrical and Computer Engineering Department, University of California

• Mishra U

  Department Of Electrical And Computer Engineering University Of California

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Keller Stacia

  Electrical And Computer Engineering Department University Of California

• Mishra Umesh

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Mishra U.

  Materials Department University Of California

• Bowers John

  Department Of Electrical And Computer Engineering University Of California Santa Barbara

• Bowers John

  Department Of Electrical And Computer Engineering University Of California

• Denbaars Steven

  Jst-erato中村pj:ucsb

• MISHRA Umesh

  Department of Electrical and Computer Engineering, University of California

• MINSKY Milan

  Department of Electrical and Computer Engineering, University of California

• CHICHIBU Shigefusa

  Materials Department, University of California

• FLEISCHER Siegfried

  Department of Electrical and Computer Engineering, University of California

• ABARE Amber

  Department of Electrical and Computer Engineering, University of California

• HU Evelyn

  Department of Electrical and Computer Engineering, University of California

• KELLER Stacia

  Materials Department, University of California

• Denbaars Steven

  Materials Department University Of California

• Mishra Umesh

  Department Of Electrical And Computer Engineering University Of California

• Abare Amber

  Department Of Electrical And Computer Engineering University Of California

• Hu Evelyn

  Department Of Electrical And Computer Engineering University Of California

• Minsky Milan

  Department Of Electrical And Computer Engineering University Of California

• Chichibu Shigefusa

  Materials Department University Of California:faculty Of Science And Technology Science University O

• Fleischer Siegfried

  Department Of Electrical And Computer Engineering University Of California

• Mishra Umesh

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

• Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
• Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
• Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
• C-4-1 Si導波路と化合物半導体MQW層を融合したレーザダイオードの提案(C-4. レーザ・量子エレクトロニクス(半導体レーザ), エレクトロニクス1)
• 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
• 28aPS-18 c面およびa面GaNにおける励起子の緩和ダイナミクス(28aPS 領域5ポスターセッション,領域5(光物性))
• 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
• High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
• Plane Dependent Growth of GaN in Supercritical Basic Ammonia
• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
• Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
• Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
• High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
• Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
• High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
• Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
• Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations
• Si delta-doped m-plane AIGaN/GaN heterojunction field-effect transistors
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
• Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
• Spiral Growth of InGaN Nanoscale Islands on GaN
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
• Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
• Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
• Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
• Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
• Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• Selective Area Mass Transport Regrowth of Gallium Nitride
• Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
• MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
• GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
• Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
• Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
• m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
• High-Speed Dynamics in InP Based Multiple Quantum Well Lasers
• Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
• AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
• High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates
• Biliary complications After Orthotopic Liver Transplantation in Rats
• Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz
• High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-$c$-Plane Oriented GaN Substrates
• 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
• Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Enhancing the Light Extraction Efficiency of Blue Semipolar $(10\bar{1}\bar{1})$ Nitride-Based Light Emitting Diodes through Surface Patterning
• Substrate Reactivity and "Controlled Contamination" in Metalorganic Chemical Vapor Deposition of GaN on Sapphire
• Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers
• Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths
• Improved Extinction Ratio in Ultra Short Directional Couplers Using Asymmetric Structures
• Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
• Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
• AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers
• Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
• Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
• Improvement of Internal Quantum Efficiency in 1.55 μm Laser Diodes with InGaP Electron Stopper Layer
• Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
• Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents
• Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes
• Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
• Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
• Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal-Organic Chemical Vapor Deposition Using a Graded Growth Strategy
• High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
• Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
• High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
• Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
• Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
• Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
• Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• Effects of Phosphor Application Geometry on White Light-Emitting Diodes
• Photoelectrochemical Properties of Nonpolar and Semipolar GaN
• AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit
• Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding

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