Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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Keller Stacia
Department Of Electrical And Computer Engineering University Of California
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Speck James
Materials Department University Of California
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DENBAARS Steven
Electrical and Computer Engineering Department, University of California
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Mishra U
Department Of Electrical And Computer Engineering University Of California
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Keller Stacia
Electrical And Computer Engineering Department University Of California
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Mishra Umesh
Materiais And Electrical And Computer Engineering University Of Callfornia
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Mishra U.
Materials Department University Of California
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Speck J
Univ. California California Usa
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Wu Yi-feng
Materials Department University Of California
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SPECK James
Electrical and Computer Engineering and Materials Departments, University of California
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NEWMAN Scott
Electrical and Computer Engineering Department, College of Engineering, University of California
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MISHRA Umesh
Electrical and Computer Engineering Department, University of California
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HEIKMAN Sten
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara
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WU Yuan
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara
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MOE Craig
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara
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MORAN Brendan
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara
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SCHMIDT Mathew
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara
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Denbaars Steven
Electrical And Computer Engineering And Materials Departments University Of California
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Schmidt Mathew
Materials Department And Erato Jst Ucsb Group University Of California
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Mishra Umesh
Electrical And Computer Engineering Department University Of California
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Speck James
Erato/jst Ucsb Group
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Moe Craig
Electrical & Computer Engineering And Materials Departments University Of California Santa Barba
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Newman Scott
Electrical & Computer Engineering And Materials Departments University Of California Santa Barba
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Moran Brendan
Electrical & Computer Engineering And Materials Departments University Of California Santa Barba
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Schmidt Mathew
Electrical & Computer Engineering And Materials Departments University Of California Santa Barba
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Heikman Sten
Electrical & Computer Engineering And Materials Departments University Of California Santa Barba
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Speck James
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
関連論文
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- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
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- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
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- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
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- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Growth of AlN by the Chemical Vapor Reaction Process
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
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- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
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- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Spiral Growth of InGaN Nanoscale Islands on GaN
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
- Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
- Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
- The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
- Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
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- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
- AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
- Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
- Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
- Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
- Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
- High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
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- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
- Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
- Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
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- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
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- Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
- Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
- Optical Characterization of Double Peak Behavior in {10\bar{1}1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
- Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
- Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
- Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
- Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching
- Selective Area Mass Transport Regrowth of Gallium Nitride
- Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
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