Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate

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概要

• 論文の詳細を見る

• Polarized light emission from $(10\bar{1}0)$ $m$-plane InGaN/GaN light-emitting diodes has been observed and analyzed in relation to the valence band structure in nonpolar InGaN/GaN quantum wells. Electroluminescence along the $\langle 1\bar{1}00\rangle$ direction out of the $m$-plane was partially polarized in the $\langle 11\bar{2}0\rangle$ direction, with a polarization ratio of 0.17. This polarized light emission exhibited a spectral peak at 2.69 eV, which has been attributed to the transition between the conduction band and the heavy hole subband with $p_x$ atomic orbital-like character due to the inhomogeneous biaxial strain in the device structure. Weak polarized emission in the $\langle 0001\rangle$ direction was also observed, with a spectral peak at the higher energy of 2.78 eV. The transition between the conduction band and the crystal-field split-off subband is believed to be responsible for the $\langle 0001\rangle$ polarized light emission.

• Japan Society of Applied Physicsの論文
• 2005-10-10

著者

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Mishra Umesh

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Masui Hisashi

  Materials Department College Of Engineering University Of California

• Chakraborty Arpan

  Materials Department University Of California

• Haskell Benjamin

  Materials Departments University Of California

• Nakamura Shuji

  Materials Department University Of Cahfornia

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Mishra Umesh

  Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Chakraborty Arpan

  Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Haskell Benjamin

  Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Masui Hisashi

  Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Haskell Benjamin

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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