Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
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概要
- 論文の詳細を見る
A bulk GaN crystal with improved structural quality was grown via ammonthermal growth with polycrystalline GaN nutrient and a sodium amide mineralizer. The threading dislocation density estimated by plan-view transmission electron microscopy observations was less than $1\times 10^{6}$ cm-2 for the Ga-face and $1\times 10^{7}$ cm-2 for the N-face. There was no dislocation generation observed at the interface on the Ga-face although a few defects were generated at the interface on the N-face. The chemical etching revealed macroscopic grains on the N-face.
- 2007-06-25
著者
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Hashimoto Tadao
Materials Department And Erato/jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Hashimoto Tadao
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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