Hashimoto Tadao | Materials Department And Erato/jst Ucsb Group University Of California
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概要
- Hashimoto Tadaoの詳細を見る
- 同名の論文著者
- Materials Department And Erato/jst Ucsb Group University Of Californiaの論文著者
関連著者
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Hashimoto Tadao
Materials Department And Erato/jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Fujito Kenji
Materials Department And Erato/jst Ucsb Group University Of California
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Nakamura Shuji
Materials Department University Of California
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Speck James
Materials Department University Of California
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Speck J
Univ. California California Usa
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FINI Paul
Materiais and Electrical and Computer Engineering, University of Callfornia
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Speck James
Erato/jst Ucsb Group
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HASHIMOTO Tadao
Materials Department and ERATO/JST UCSB group, University of California
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Haskell Benjamin
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Haskell Benjamin
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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WU Feng
Materials Department, University of California
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SAITO Makoto
Materials Department and Electrical Engineering Department, University of California
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Heying Benjamin
Solid State Lighting And Display Center University Of California
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Wu Feng
Materials Department University Of California
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HASKELL Benjamin
Materials Departments, University of California
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Fini Paul
Materials Department And Erato/jst Ucsb Group University Of California
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Heying B.
Solid State Lighting And Display Center University Of California
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Haskell Benjamin
Materials Departments University Of California
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FUJITO Kenji
Mitsubishi Chemical Corporation
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FUJITO Kenji
Materials Department and ERATO/JST UCSB Group, University of California
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Wu F
米国
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Saito Makoto
Materials Department University Of California
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Wu Feng
Materials Department University Of California Santa Barbara
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Saito Makoto
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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SPECK J.
Materials Department, University of California, Santa Barbara
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Wu Feng
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Fujino Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation
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Hashimoto Tadao
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Fujino Kenji
Materials Department and ERATO/JST UCSB Group, University of California
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Fini Paul
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Fujito Kenji
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Hashimoto Tadao
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
著作論文
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
- Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia