Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
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概要
- 論文の詳細を見る
- 2005-12-25
著者
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Nakamura Shuji
Materials Department University Of California
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Speck James
Materials Department University Of California
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SAITO Makoto
Materials Department and Electrical Engineering Department, University of California
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Speck J
Univ. California California Usa
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Speck James
Erato/jst Ucsb Group
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HASHIMOTO Tadao
Materials Department and ERATO/JST UCSB group, University of California
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FUJITO Kenji
Mitsubishi Chemical Corporation
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Saito Makoto
Materials Department University Of California
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Fujito Kenji
Materials Department And Erato/jst Ucsb Group University Of California
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Hashimoto Tadao
Materials Department And Erato/jst Ucsb Group University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Saito Makoto
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
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- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
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- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
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- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
- AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
- Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
- High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates
- High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-$c$-Plane Oriented GaN Substrates
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
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- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
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- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
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- Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
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- Effects of Phosphor Application Geometry on White Light-Emitting Diodes
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
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