Nakamura Shuji | Materials Department University Of Cahfornia
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概要
関連著者
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Nakamura Shuji
Materials Department University Of Cahfornia
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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Nakamura Shuji
Materials Department University Of California
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Speck James
Materials Department University Of California
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Speck J
Univ. California California Usa
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Denbaars Steven
Jst-erato中村pj:ucsb
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Fujito Kenji
Optoelectronics Laboratory Mitsubishi Chemical Corporation
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Masui Hisashi
Materials Department College Of Engineering University Of California
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Speck James
Erato/jst Ucsb Group
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Saito Makoto
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Denbaars Steven
Nicp/erato Jst Ucsb Group University Of California
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Fujito Kenji
Materials Department And Erato/jst Ucsb Group University Of California
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FELLOWS Natalie
Materials Department and Electrical Engineering Department, University of California
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Denbaars Steven
Electrical And Computer Engineering Department University Of California
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FUJITO Kenji
Optoelectronics Laboratory, Mitsubishi Chemical Corporation
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SAITO Makoto
Materials Department and Electrical Engineering Department, University of California
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Schmidt Mathew
Materials Department And Erato Jst Ucsb Group University Of California
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Ohta Hiroaki
Materials Department University Of California
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Baker Troy
Materials Department University Of California Santa Barbara
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IZA Michael
Materials and Electrical Engineering Departments, University of California
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Feezell Daniel
Materials Department And Erato Jst Ucsb Group University Of California
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Pan Chih-chien
Materials Department University Of California
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Tanaka Shinichi
Materials Department University Of California
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Sato Hitoshi
Materials Department And Electrical Engineering Department University Of California
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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DENBAARS Steven
Electrical and Computer Engineering Department, University of California
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ASAMIZU Hirokuni
Materials Department and Electrical Engineering Department, University of California
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Denbaars Steven
Materials Department University Of California
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Saito Makoto
Materials Department University Of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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Hashimoto Tadao
Materials Department And Erato/jst Ucsb Group University Of California
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SPECK J.
Materials Department, University of California, Santa Barbara
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Haskell Benjamin
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Tyagi Anurag
Electrical And Computer Engineering And Materials Departments University Of California
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Mishra Umesh
Materiais And Electrical And Computer Engineering University Of Callfornia
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Wu Feng
Materials Department University Of California
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FARRELL Robert
Materials Department, and ERATO JST, UCSB Group, University of California
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Sonoda Junichi
Materials Department University Of California
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PFAFF Nathan
Materials Department, University of California, Santa Barbara
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Tyagi Anurag
Solid State Lighting And Energy Center Materials Department University Of California
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Masui Hisashi
Department Of Electrical And Computer Engineering University Of California
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Lin You-da
Electrical And Computer Engineering And Materials Departments University Of California
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WU Feng
Materials Department, University of California
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OHTA Hiroaki
Materials Department, University of California
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SATO Hitoshi
Materials Department and Electrical Engineering Department, University of California
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MASUI Hisashi
Materials Department, University of California
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Yamada Hisashi
Materials Department University Of California
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Fellows Natalie
Solid State Lighting And Energy Center Materials Department University Of California
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FINI Paul
Materiais and Electrical and Computer Engineering, University of Callfornia
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Iso Kenji
Materials Department University Of California
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Murai Akihiko
Materials And Electrical And Computer Engineering Departments University Of California
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Hsu Po
Materials Department University Of California
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浅水 啓州
Materials Department University Of California
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Kaeding John
Materials And Electrical Engineering Departments University Of California
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Kim Kwang-choong
Materials Department And Erato Jst Ucsb Group University Of California
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Haskell Benjamin
Materials Departments University Of California
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Thompson Daniel
Materials And Electrical And Computer Engineering Departments University Of California
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Wu F
米国
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Koslow Ingrid
Materials Department University Of California
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Hirasawa Hirohiko
Materials Department And Electrical Engineering Department University Of California
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Zhao Yuji
Materials Department University Of California
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Zhong Hong
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Tyagi Anurag
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Chung Roy
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Hardy Matthew
Materials Department University Of California
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HSU Po
Materials Department, University of California
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Chen Christina
Materials And Electrical And Computer Engineering Departments University Of California
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Cohen Daniel
Materials Department University Of California
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Heying Benjamin
Solid State Lighting And Display Center University Of California
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HASKELL Benjamin
Materials Departments, University of California
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Heying B.
Solid State Lighting And Display Center University Of California
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Chakraborty Arpan
Materials Department University Of California
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HASHIMOTO Tadao
Materials Department and ERATO/JST UCSB group, University of California
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Holder Casey
Materials Department University Of California
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Young Erin
Materials Department University Of California
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Sharma Rajat
Materials Department University Of California
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Kelchner Kathryn
Department Of Electrical And Computer Engineering University Of California
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Masui Hisashi
Solid State Lighting And Energy Center Materials Department University Of California
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Wu Feng
Materials Department University Of California Santa Barbara
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SPECK James
Materials Department, University of California, Santa Barbara
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GILBERT Tao
Materials Department, University of California, Santa Barbara
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Keller Stacia
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujino Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation
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Ha Jun-Seok
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Baker Troy
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Ohta Hiroaki
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Zhao Yuji
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106-9560, U.S.A.
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Hardy Matthew
Univ. California Ca Usa
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HUANG Chia-Yen
Materials Department, University of California
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Mishra U
Department Of Electrical And Computer Engineering University Of California
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HIRASAWA Hirohiko
Materials Department and Electrical Engineering Department, University of California
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TYAGI Anurag
Materials Department and Electrical Engineering Department, University of California
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DIANA Frederic
Materials Department, University of California
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KELCHNER Kathryn
Department of Electrical and Computer Engineering, University of California
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LIN You-Da
Department of Electrical and Computer Engineering, University of California
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Mishra U.
Materials Department University Of California
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Feng Wu
Division Of Quantum Energy Engineering Graduate School Of Engineering Hokkaido University
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KELCHNER Kathryn
Electrical and Computer Engineering Department, University of California
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HAEGER Daniel
Materials Department, University of California
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FARRELL Robert
Electrical and Computer Engineering Department, University of California
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SCHMIDT Mathew
Materials Department, College of Engineering, University of California
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Yao Takafumi
Center For Interdisciplinary Research Tohoku University
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IZA Michael
Electrical and Computer Engineering and Materials Departments, University of California
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KAMBER Derrick
Materials Department, University of California Santa Barbara
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ISO Kenji
Materials Department, University of California
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KIM Kwang-Choong
Materials Department, and ERATO JST, UCSB Group, University of California
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MURAI Akihiko
Materials and Electrical and Computer Engineering Departments, University of California
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THOMPSON Daniel
Materials and Electrical and Computer Engineering Departments, University of California
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CHAKRABORTY Arpan
Electrical and Computer Engineering and Materials Departments, University of California
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KAEDING John
Materials and Electrical Engineering Departments, University of California
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Gao Yan
Materials Department University Of California
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Yamamoto Shuichiro
Materials Department University Of California
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Iza Michael
Electrical And Computer Engineering And Materials Departments University Of California
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Fini Paul
Materials Department And Erato/jst Ucsb Group University Of California
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Hu Evelyn
Materials Department University Of California
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Fujii Tetsuo
Nicp/erato Jst Ucsb Group University Of California
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Gallinat Chad
Materials Department University Of California
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Haeger Daniel
Materials Department University Of California
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Kamber Derrick
Materials Department University Of California Santa Barbara
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Farrell Robert
Department Of Electrical And Computer Engineering University Of California
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Diana Frederic
Materials Department University Of California
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SZTEIN Alexander
Materials Department, University of California
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RAMU Ashok
Electrical and Computer Engineering Department, University of California
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DOWERS John
Electrical and Computer Engineering Department, University of California
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Dowers John
Electrical And Computer Engineering Department University Of California
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Ramu Ashok
Electrical And Computer Engineering Department University Of California
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Fujii Katsushi
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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YOUNG Erin
Materials Department, University of California
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ROMANOV Alexey
Materials Department, University of California
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SHARMA Rajat
Materials Department, University of California
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FUJITO Kenji
NICP/ERATO JST, UCSB Group, University of California
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FUJITO Kenji
Mitsubishi Chemical Corporation
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FUJITO Kenji
Materials Department and ERATO/JST UCSB Group, University of California
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Romanov Alexey
Materials Department University Of California
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Bowers John
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U
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Schmidt Mathew
Soraa Inc.
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Brinkley Stuart
Electrical And Computer Engineering Department University Of California
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Ohkawa Kazuhiro
Nakamura Inhomogeneous Crystal Project Exploratory Research For Advanced Technology Japan Science An
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Bierwagen Oliver
Materials Department University Of California
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Sztein Alexander
Materials Department University Of California
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Feezell Daniel
Materials Department University Of California Santa Barbara
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Saito Makoto
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Saito Makoto
Materials Department, and ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Asamizu Hirokuni
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.
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Asamizu Hirokuni
Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Ivb Tommy
Materials Research Laboratory, University of California, Santa Barbara, CA 93106-5121, U.S.A.
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Wu Feng
Materials Department, University of California, Santa Barbara
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Lin You-Da
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Schmidt Mathew
Materials Department, and ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Schmidt Mathew
Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Pan Chih-Chien
Materials Department, University of California, Santa Barbara
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Waki Ichitaro
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Mishra Umesh
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fichtenbaum Nicholas
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Schmidt Mathew
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.
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Wu Feng
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Mishra Umesh
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Yamada Hisashi
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Huang Chia-Yen
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Chakraborty Arpan
Electrical and Computer Engineering Department, College of Engineering, University of California, Santa Barbara, CA 93106-9560, U.S.A.
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Chakraborty Arpan
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Keller Stacia
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Fini Paul
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Sonoda Junichi
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Sonoda Junichi
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Fujito Kenji
Optoelectronics Laboratory, Mitsubishi Chemical Co., Ltd., 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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Fujito Kenji
Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan
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Iso Kenji
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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FEEZELL Daniel
Materials Department, University of California, Santa Barbara
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Feezell Daniel
Materials Department, and ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Feezell Daniel
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Farrell Robert
Materials Department, and ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Masui Hisashi
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Furukawa Motoko
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
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Iwaki Yasuhiro
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Hardy Matthew
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Iza Mike
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Kim Kwang
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Ha Junseok
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Hashimoto Tadao
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Kim Kwang-Choong
Materials Department, and ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106, U.S.A.
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DENBAARS Steven
Materials Department, University of California, Santa Barbara
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.
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Ha Jun-Seok
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Zhao Yuji
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
著作論文
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia
- Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching
- AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
- High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar ($20\bar{2}1$) GaN Substrates
- Enhancing the Light Extraction Efficiency of Blue Semipolar $(10\bar{1}\bar{1})$ Nitride-Based Light Emitting Diodes through Surface Patterning
- Electroluminescence Characterization of ($20\bar{2}1$) InGaN/GaN Light Emitting Diodes with Various Wavelengths
- Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN : Optical Properties of Condensed Matte
- Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
- Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
- High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar $(30\bar{3}\bar{1})$ Bulk GaN Substrate
- Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
- Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
- Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents
- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
- Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20\bar{2}\bar{1}) Blue Light-Emitting Diodes
- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
- Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
- Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
- High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
- Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
- Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
- Effects of Phosphor Application Geometry on White Light-Emitting Diodes
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN
- Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
- Green Semipolar (20\bar{2}\bar{1}) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
- Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature
- Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
- First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
- Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates
- Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
- Effect of Substrate Miscut on the Direct Growth of Semipolar ($10\bar{1}\bar{1}$) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition
- Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth