Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
In this study we demonstrate a direct correlation between carrier gas and the generation of basal plane stacking faults (BPSF) in m-plane GaN during hydride vapor phase epitaxy (HVPE) regrowth. Extended defects have hampered the expansion of non-polar and semi-polar GaN substrates. In this work, high-quality m-plane free-standing substrates were regrown by HVPE under a wide range of growth conditions and carrier gases. It was observed that hydrogen carrier gas in the HVPE growth promotes the creation of BPSF due to three-dimensional (3D) growth initiated from a masking effect. In contrast, nitrogen carrier gas suppresses 3D growth and thus BPSF generation.
- The Japan Society of Applied Physicsの論文
- 2013-11-25
著者
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Young Erin
Materials Department University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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Fujito Kenji
Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 3001295, Japan
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Bryant Benjamin
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Young Erin
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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