Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20\bar{2}\bar{1}) Blue Light-Emitting Diodes
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概要
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We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (20\bar{2}\bar{1}) plane. At a current density 100 A/cm2, the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 °C. Hot/cold factors were more than 0.9 at current densities greater than 20 A/cm2. A high characteristic temperature of 900 K and low junction temperature of 68 °C were also measured using bare LED chips.
- 2012-10-25
著者
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Feezell Daniel
Materials Department And Erato Jst Ucsb Group University Of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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Pan Chih-chien
Materials Department University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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Tanaka Shinichi
Materials Department University Of California
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GILBERT Tao
Materials Department, University of California, Santa Barbara
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PFAFF Nathan
Materials Department, University of California, Santa Barbara
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Zhao Yuji
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106-9560, U.S.A.
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DenBaars Steven
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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