Tanaka Shinichi | Materials Department University Of California
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概要
関連著者
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Tanaka Shinichi
Materials Department University Of California
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Nakamura Shuji
Materials Department University Of Cahfornia
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DenBaars Steven
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Feezell Daniel
Materials Department And Erato Jst Ucsb Group University Of California
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Zhao Yuji
Electrical And Computer Engineering Department University Of California
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Pan Chih-chien
Materials Department University Of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Zhao Yuji
Materials Department University Of California
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
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Kawaguchi Yoshinobu
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Feezell Daniel
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DENBAARS Steven
Materials Department and Electrical Engineering Department, University of California
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Speck James
Materials Department And Erato/jst Ucsb Group University Of California
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GILBERT Tao
Materials Department, University of California, Santa Barbara
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PFAFF Nathan
Materials Department, University of California, Santa Barbara
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Zhao Yuji
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106-9560, U.S.A.
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Oh Sang
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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FUJITO Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation
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Speck J
Univ. California California Usa
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Denbaars Steven
Jst-erato中村pj:ucsb
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Wu Feng
Materials Department University Of California
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Denbaars Steven
Electrical And Computer Engineering And Materials Departments University Of California
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Nakamura Shuji
Electrical And Computer Engineering Department University Of California
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Feezell Daniel
Materials Department University Of California Santa Barbara
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Wu Feng
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department, University of California, Santa Barbara
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SPECK James
Materials Department, University of California, Santa Barbara
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Pan Chih-Chien
Materials Department, University of California, Santa Barbara
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Fujito Kenji
Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan
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Feezell Daniel
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Feezell Daniel
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Zhao Yuji
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Pfaff Nathan
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Tanaka Shinichi
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Zhao Yuji
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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OH Sang
Electrical and Computer Engineering Department, University of California
著作論文
- High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (20\bar{2}\bar{1}) Blue Light-Emitting Diodes
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
- Green Semipolar (20\bar{2}\bar{1}) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
- Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth