High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

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概要

• 論文の詳細を見る

• We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing ($20\bar{2}\bar{1}$) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6 mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5 mW and 45.3%, respectively.

• 2011-08-25

著者

• Denbaars Steven

  Electrical And Computer Engineering And Materials Departments University Of California

• Nakamura Shuji

  Electrical And Computer Engineering Department University Of California

• Feezell Daniel

  Materials Department And Erato Jst Ucsb Group University Of California

• Zhao Yuji

  Electrical And Computer Engineering Department University Of California

• Pan Chih-chien

  Materials Department University Of California

• Tanaka Shinichi

  Materials Department University Of California

• Speck James

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fujito Kenji

  Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

• Fujito Kenji

  Optoelectronic Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan

• Feezell Daniel

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Zhao Yuji

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Feezell Daniel

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

• FUJITO Kenji

  Optoelectronic Laboratory, Mitsubishi Chemical Corporation

関連論文

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