Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

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概要

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• Mg redistribution into a subsequently regrown GaN epilayer by metalorganic chemical vapor deposition (MOCVD) is studied. Dopant profiles from secondary ion mass spectrometry (SIMS) on n–p–n GaN samples have been analyzed. The regrowth study in a Mg-free reactor reveals that a Mg-rich film is present on MOCVD as-grown GaN:Mg base layers and can be removed by an acid etch, and that a slow Mg decay into the sequentially regrown GaN results from this Mg-rich surface film. We believe the commonly seen Mg memory effect in MOCVD causes the accumulation of Mg on the surface. From a MOCVD regrowth on n–p–n GaN grown by molecular beam epitaxy (MBE), the Mg diffusion constant is calculated to be about $3 \times 10^{-15}$ cm2/s at 1160°C for Mg concentrations between $5 \times 10^{17}$ cm-3 and $1 \times 10^{19}$ cm-3. The roles of memory effect, surface segregation, and diffusion associated with Mg are addressed.

• 2003-01-15

著者

• KOZODOY Peter

  Agility

• Mates Tom

  Materials Department College Of Engineering University Of California

• Xing Huili

  Electrical And Computer Engineering Department University Of California

• Yu Haijiang

  Materials Department University Of California

• Green Daniel

  Electrical And Computer Engineering Department University Of California

• Mishra Umesh

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Keller Stacia

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Xing Huili

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Green Daniel

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Mates Tom

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

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