High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
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概要
- 論文の詳細を見る
We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar $(10\bar{1}\bar{1})$ GaN bulk substrates. The LEDs have a dimension of $300 \times 300$ μm2 and are packaged in an epoxy resin. The output power and external quantum efficiency (EQE) at a driving current of 20 mA were 20.58 mW and 33.91% respectively, with peak electroluminescence (EL) emission wavelength at 411 nm. The LEDs show minimal shift in peak EL wavelength with increasing drive current along with a high EQE.
- 2007-02-25
著者
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Tyagi Anurag
Electrical And Computer Engineering And Materials Departments University Of California
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FELLOWS Natalie
Electrical and Computer Engineering and Materials Departments, University of California
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Nakamura Shuji
Electrical And Computer Engineering Department University Of California
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Iza Michael
Electrical And Computer Engineering And Materials Departments University Of California
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Zhong Hong
Electrical And Computer Engineering And Materials Departments University Of California
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Speck James
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Iza Michael
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Zhong Hong
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Tyagi Anurag
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Fellows Natalie
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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