Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
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概要
- 論文の詳細を見る
We report on the structural and electroluminescence characteristics of blue and cyan $a$-plane InGaN/GaN light-emitting diodes (LEDs). Cross-sectional transmission emission microscopy revealed the generation of occasional "asymmetric V-defects" in the active region. The blue and cyan LEDs exhibited rectifying behavior with forward voltages of 2.4 and 3.5 V at 20 mA, respectively and series resistances of 7 and 8 $\Omega$, respectively. On-wafer dc output powers as high as 1.8 and 1.0 mW were measured at a drive current of 300 mA for the blue and the cyan LEDs, respectively. Electroluminescence measurement revealed an initial blue shift in the emission wavelength with the increase in the drive current. We speculate that the emission wavelength shift is due to the band-filling effect as a result of localization in the inclined non-$\{11\bar{2}0\}$ oriented facets, which are polar in nature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
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CHAKRABORTY Arpan
Electrical and Computer Engineering and Materials Departments, University of California
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Denbaars Steven
Electrical And Computer Engineering And Materials Departments University Of California
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Nakamura Shuji
Electrical And Computer Engineering Department University Of California
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Wu Feng
Materials Department and NICP ERATO/JST Group, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Keller Stacia
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Haskell Benjamin
Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Kim Kwang
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
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DenBaars Steven
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Haskell Benjamin
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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Kim Kwang
Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, CA 93106-5050, U.S.A.
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