Demonstration of Nonpolar $m$-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing $m$-Plane GaN Substrates
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概要
- 論文の詳細を見る
We report the fabrication of nonpolar $m$-plane InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on free-standing $m$-plane GaN substrates. On-wafer continuous wave output power of 240 μW was measured at 20 mA for a $300\times 300$ μm2 device, and output power as high as 2.95 mW was measured at 300 mA. There was no sign of saturation of the output power at high drive currents. An emission peak at 450 nm was obtained on electroluminescence measurements with high drive currents. The current-voltage characteristics of these LEDs showed rectifying behavior with a turn-on voltage of 3–4 V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-10
著者
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CHAKRABORTY Arpan
Electrical and Computer Engineering and Materials Departments, University of California
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SPECK James
ERATO JST, UCSB Group, University of California
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DENBAARS Steven
ERATO JST, UCSB Group, University of California
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NAKAMURA Shuji
ERATO JST, UCSB Group, University of California
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MISHRA Umesh
ERATO JST, UCSB Group, University of California
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Haskell Benjamin
Erato Jst Ucsb Group University Of California
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Keller Stacia
Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.
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Mishra Umesh
ERATO JST, UCSB Group, University of California, Santa Barbara, California 93106, U.S.A.
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Keller Stacia
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106, U.S.A.
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Chakraborty Arpan
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106, U.S.A.
関連論文
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