Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of $m$-Plane GaN
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概要
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A model of basal plane stacking faults as boundaries between incoherently scattering domains in $m$-plane GaN films is reviewed. $m$-Plane GaN films are analyzed with a modified version of the Williamson–Hall analysis in order to determine the length-scale of coherent scattering and tilt-mosaic contribution to X-ray rocking curve widths for the primary in-plane directions. This analysis shows that basal plane stacking faults are the predominant source of rocking-curve width anisotropy in the $m$-plane films, and indicate that the modified Williamson–Hall analysis can be used as a non-destructive technique for measuring basal plane stacking fault densities in $m$-GaN films.
- 2008-07-25
著者
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Young Erin
Materials Department University Of California
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Speck James
Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, U.S.A.
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Hirai Asako
Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, U.S.A.
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Young Erin
Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, U.S.A.
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Wu Feng
Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.
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McLaurin Melvin
Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, U.S.A.
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Speck James
Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.
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