Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-12-01

著者

• Speck James

  Materials Department University Of California

• WU Feng

  Materials Department, University of California

• Mishra U

  Department Of Electrical And Computer Engineering University Of California

• Mishra Umesh

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Mishra U.

  Materials Department University Of California

• Speck J

  Univ. California California Usa

• Wu Feng

  Materials Department University Of California

• Feng Wu

  Division Of Quantum Energy Engineering Graduate School Of Engineering Hokkaido University

• POBLENZ Christiane

  Materiais and Electrical and Computer Engineering, University of Callfornia

• WALTEREIT Patrick

  Materials Department, University of California

• RAJAN Siddharth

  Materials Department and Electrical and Computer Engineering Department, University of California Sa

• Speck James

  Erato/jst Ucsb Group

• Wu F

  米国

• Poblenz Christiane

  Soraa Inc.

• Poblenz Christiane

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Waltereit Patrick

  Materials Department University Of California

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Wu Feng

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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