Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al₂O₃ Deposited by Atomic Layer Deposition

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概要

• 論文の詳細を見る

• Enhancement-mode $m$-plane AlGaN/GaN heterojunction field-effect transistors were fabricated with an Al₂O₃ gate dielectric deposited by atomic layer deposition (ALD). A threshold voltage of +3 V and an on/off ratio of $4\times 10^{6}$ were obtained, demonstrating excellent subthreshold region characteristics. These results were achieved using non-polar $m$-plane GaN, Al₂O₃ as a gate dielectric, and a recessed-gate structure. The devices exhibited 138 mA/mm of maximum drain--source current at a gate--source voltage ($V_{\text{gs}}$) of +7 V and 45 mS/mm of maximum transconductance at $V_{\text{gs}}=+5$ V. The interface state density ($D_{\text{it}}$) of Al₂O₃ and $m$-plane GaN was measured using the photo assisted capacitance--voltage method, showing a $D_{\text{it}}$ of $(1{\mbox{--}}2)\times 10^{12}$ cm-2 eV-1. These results indicate the potential of Al₂O₃ deposited by ALD on $m$-plane GaN for power switching devices.

• 2011-09-25

著者

• Keller Stacia

  Department Of Electrical And Computer Engineering University Of California

• Speck James

  Materials Department University Of California

• Denbaars Steven

  Jst-erato中村pj:ucsb

• Denbaars Steven

  Department Of Electrical And Computer Engineering University Of California

• Mishra Umesh

  Department Of Electrical And Computer Engineering University Of California

• Fujiwara Tetsuya

  Department Of Electrical And Computer Engineering University Of California

• Yeluri Ramya

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106

• Denninghoff Dan

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106

• Lu Jing

  Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106

• Yeluri Ramya

  Department Of Electrical And Computer Engineering University Of California

• DENNINGHOFF Dan

  Department of Electrical and Computer Engineering, University of California

• Mishra Umesh

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Keller Stacia

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• LU Jing

  Department of Electrical and Computer Engineering, University of California

• DenBaars Steven

  Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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