Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2008-06-25

著者

• Speck James

  Materials Department University Of California

• WU Feng

  Materials Department, University of California

• Mishra U

  Department Of Electrical And Computer Engineering University Of California

• Mishra Umesh

  Materiais And Electrical And Computer Engineering University Of Callfornia

• Mishra U.

  Materials Department University Of California

• Speck J

  Univ. California California Usa

• Wu Feng

  Materials Department University Of California

• Feng Wu

  Division Of Quantum Energy Engineering Graduate School Of Engineering Hokkaido University

• MISHRA Umesh

  Electrical and Computer Engineering Department, University of California

• KOBLMULLER Gregor

  Materials Department, University of California

• CHU Rongming

  Electrical and Computer Engineering Department, University of California

• Mishra Umesh

  Electrical And Computer Engineering Department University Of California

• Speck James

  Erato/jst Ucsb Group

• Koblmuller Gregor

  Materials Department University Of California

• Wu F

  米国

• Chu Rongming

  Electrical And Computer Engineering Department University Of California

• Koblmueller Gregor

  Materials Department University Of California

• Speck James

  Materials Department And Erato/jst Ucsb Group University Of California

• Mishra Umesh

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Wu Feng

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

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• High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
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• Demonstration of 426nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
• Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Growth of AlN by the Chemical Vapor Reaction Process
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
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• Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
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• AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
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• Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
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• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
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• AlGaN-Claddingb-free nonpolar InGaN/GaN laser diodes
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• Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
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• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
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