Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

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概要

• 論文の詳細を見る

• We report on the DC and pulsed performance of nonpolar $m$-plane InGaN/GaN multiple-quantum-well light-emitting diode (LED) lamps. LED structures were grown on free-standing $m$-plane GaN substrates by metalorganic chemical vapor deposition. LEDs with an area of $300\times 300$ μm2 were packaged into conventional epoxy-encapsulated lamps. The emission wavelength of the LEDs was 452 nm. A CW output power as high as 0.6 mW was achieved at a drive current of 20 mA, corresponding to an external quantum efficiency of 1.09%. Pulsed power measurement on the lamps yielded an output power of 23.5 mW at a drive current of 1 A for a duty cycle of 0.25%.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-02-15

著者

• Keller Stacia

  Electrical And Computer Engineering Department University Of California

• Masui Hisashi

  Materials Department College Of Engineering University Of California

• CHAKRABORTY Arpan

  Electrical and Computer Engineering and Materials Departments, University of California

• Denbaars Steven

  Electrical And Computer Engineering And Materials Departments University Of California

• Nakamura Shuji

  Electrical And Computer Engineering Department University Of California

• Mishra Umesh

  Electrical And Computer Engineering Department University Of California

• Haskell Benjamin

  Materials Departments University Of California

• Speck James

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Mishra Umesh

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Chakraborty Arpan

  Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Keller Stacia

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Haskell Benjamin

  Materials Department, Electrical and Computer Engineering Department, and NICP/ERATO JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Haskell Benjamin

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Masui Hisashi

  Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

• DenBaars Steven

  Electrical & Computer Engineering and Materials Departments, University of California Santa Barbara, CA 93106, U.S.A.

• Haskell Benjamin

  Materials Department and ERATO/JST UCSB Group, University of California, Santa Barbara, CA 93106-5050, U.S.A.

• Speck James

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

関連論文

• Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
• Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
• High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
• Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
• Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
• High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1122) Plane Gallium Nitrides
• Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
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• Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
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• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
• Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
• Spiral Growth of InGaN Nanoscale Islands on GaN
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
• Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of Substrate Miscut on the Direct Growth of Semipolar (1011) GaN on (100) MgAl_2O_4 by Metalorganic Chemical Vapor Deposition
• Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
• Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
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• Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
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• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
• Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy
• Ohmic Cathode Electrode on the Backside of $m$-Plane and ($20\bar{2}1$) Bulk GaN Substrates for Optical Device Applications
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• Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors
• High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
• 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
• Enhancing the Light Extraction Efficiency of Blue Semipolar $(10\bar{1}\bar{1})$ Nitride-Based Light Emitting Diodes through Surface Patterning
• High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates
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• Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution
• Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
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• Optimization of Device Structures for Bright Blue Semipolar ($10\bar{1}\bar{1}$) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
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• Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of $m$-Plane GaN
• Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
• Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
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• Optical Characterization of Double Peak Behavior in {10\bar{1}1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
• Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
• Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Laser Diodes
• High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
• Impact of Substrate Miscut on the Characteristic of $m$-plane InGaN/GaN Light Emitting Diodes
• Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes
• Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk $m$-Plane GaN Substrate
• Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
• Growth of Bulk GaN Crystals by the Basic Ammonothermal Method
• Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films
• Effects of Phosphor Application Geometry on White Light-Emitting Diodes
• Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
• Photoelectrochemical Properties of Nonpolar and Semipolar GaN
• Low Ohmic Contact Resistance $m$-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown $a$-Plane GaN
• Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching
• Selective Area Mass Transport Regrowth of Gallium Nitride
• Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
• Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors
• Stability of $(1\bar{1}00)$ $m$-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Green Semipolar (20\bar{2}\bar{1}) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
• Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
• Characterization of $a$-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
• Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature
• Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
• First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes
• Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
• Semipolar $(10\bar{1}\bar{1})$ InGaN/GaN Laser Diodes on Bulk GaN Substrates
• Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
• Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
• Demonstration of Nonpolar $m$-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing $m$-Plane GaN Substrates

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