Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents

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概要

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• The present article discusses the radiative recombination efficiency in electroluminescence of InGaN-based light-emitting diodes prepared on sapphire substrates. The radiative efficiency was studied over a temperature and injection-current range on three samples with different optical performance. The efficiency generally improved as temperature was lowered or current was increased, however, reduced under low-temperature and high-current conditions on high-quality samples. Our model took electron overflow and kinetic carrier generation into account to explain the reduced efficiency, and a calculation based on the model reasonably reproduced the efficiency reduction. The near-UV emission often observed at low temperature was qualitatively explained by the model.

• 2007-07-25

著者

• ASAMIZU Hirokuni

  Materials Department and Electrical Engineering Department, University of California

• FELLOWS Natalie

  Materials Department and Electrical Engineering Department, University of California

• DENBAARS Steven

  Materials Department and Electrical Engineering Department, University of California

• Masui Hisashi

  Materials Department College Of Engineering University Of California

• Schmidt Mathew

  Materials Department And Erato Jst Ucsb Group University Of California

• Nakamura Shuji

  Materials Department University Of Cahfornia

• Sato Hitoshi

  Materials Department And Electrical Engineering Department University Of California

• Asamizu Hirokuni

  Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.

• Schmidt Mathew

  Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.

• DenBaars Steven

  Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.

• DenBaars Steven

  Materials Department and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

• Fellows Natalie

  Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050, U.S.A.

• Sato Hitoshi

  Materials and Electrical Engineering Departments, University of California, Santa Barbara, CA 93106, U.S.A.

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